Carbo nano-Structure Based Resistive Memory Device For data Storage Application

Abstract

In recent years, there is a higher need and requirement for stable energy storage and high-capacity devices like resistive memory devices. This PhD thesis is based on the synthesis, characterization, and fabrication of MXene, and graphene-oxide based nanocomposite materials (ACr2O4 /MXene and GO) (A=Na, Bi, Al, Ni, and Sr) and their applications as electrochemical storage capacity in devices respectively. We have synthesized carbon based seven (07) nanocomposites (ACr2O4 /MXene and GO), reported in this thesis. For this purpose, Co-precipitation method is used for the synthesis of nanocomposites (ACr2O4 /MXene and GO). Spinel chromite ACr2O4 (A=Na, Bi, Al, Ni, Fe1-xSrx and Sr) were used with carbon-based two-dimensional materials for the synthesis of nanocomposites (ACr2O4 /MXene and GO). Also reported the results obtained by fabricated Resistive memory device’s by using these materials as electrodes. The band gap for all nanocomposites were calculated between (1.90 - 4) eV based on the UV – VIS absorption spectrum. From X- Ray Diffraction (XRD) the average crystalline sizes of Nanocomposites have found. From Energy Dispersive X-ray Spectroscopy (EDX), it is proved that desired particles are present in the nanocomposites sample. Surface morphology of nanocomposites was determined by using Scanning Electron Microscopy (SEM), the parent Spinel nanoparticles are attached on the surface of MXene and GO. Raman Spectroscopy results shown strong peaks between (500cm-1 - 1500 cm-1), Synthesized nanocomposites with ratios 0.2, 0.4, 0.6 and 0.8 colloidal stability is low due to zeta potential values with ionic conductivities 2.24×10-2 mS/cm, 1.83×10-2 mS/cm, 1.65×10-2 mS/cm, and 2.46×10-2 mS/cm respectively, from Galvanostatic charge- discharge (GCD), the charging and discharging curves are asymmetric because the charging current density was held constant at 5 mA/g. While the discharging current densities ranged from 1mA/g to 20mA/g. From Fourier-Transform Infrared Spectrometer (FTIR) the nanocomposite formation in the spectrum is shown at peaks 566 cm-1 and 626 cm-1 and Electrochemical Impedance Spectroscopy (EIS) were done for nanocomposites. The observed value of specific capacitance from Cyclic Voltammetry (CV) data was 455.5 F/g for different Nanocomposites. The current voltage results of Resistive memory devices are very good.