Please use this identifier to cite or link to this item:
http://prr.hec.gov.pk/jspui/handle/123456789/7381| Title: | CHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY |
| Authors: | Ajaz-un-Nabi, Muhammad |
| Keywords: | Natural Sciences Physics Classical mechanics Fluid mechanics |
| Issue Date: | 2014 |
| Publisher: | The Islamia University of Bahawalpur, Pakistan |
| Abstract: | N/A |
| URI: | http://prr.hec.gov.pk/jspui/handle/123456789//7381 |
| Appears in Collections: | PhD Thesis of All Public / Private Sector Universities / DAIs. |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Ajaz_un_Nabi_Physics_HSR_2014_IUB_Bahawalpur_13.07.2017.pdf | Complete Thesis | 2.97 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.