Please use this identifier to cite or link to this item: http://prr.hec.gov.pk/jspui/handle/123456789/7381
Title: CHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY
Authors: Ajaz-un-Nabi, Muhammad
Keywords: Natural Sciences
Physics
Classical mechanics
Fluid mechanics
Issue Date: 2014
Publisher: The Islamia University of Bahawalpur, Pakistan
Abstract: N/A
URI:  http://prr.hec.gov.pk/jspui/handle/123456789//7381
Appears in Collections:PhD Thesis of All Public / Private Sector Universities / DAIs.

Files in This Item:
File Description SizeFormat 
Ajaz_un_Nabi_Physics_HSR_2014_IUB_Bahawalpur_13.07.2017.pdfComplete Thesis2.97 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.